Senior RFIC Designer
 	
 -Experience in CMOS and BiCMOS technologies in different nodes from 350 nm to 28nm.
 	
-Dual-band (narrowband 14 GHz, and wideband 27?31 GHz) transmitter for satellite communications. 55 nm CMOS - to be measured
 	
- Highly linear power amplifier. Design and layout.
 	
- Four-way active power divider. Design and layout.
 	
- Upconversion IQ mixer. Design and layout.
 	
- Sub-LO buffers. Design and layout.
 	
79 GHz intagrated radar sensor for automotive applications. 130 nm SiGe BiCMOS - measured
 	
- System-level specifications.
 	
- Fractional-N PLL with fundamental VCO. Design and layout.
 	
- Transmitter design and layout.
 	
- LO distribution. Design and layout.
 	
- IQ demodulator. Design and layout.
 	
60 GHz 2TX-4RX MIMO FMCW intagrated radar sensor. 130 nm SiGe BiCMOS - measured
 	
- TX chain design and implementation. Programmable gain with 7 GHz bandwidth.
 	
- RX chain including LO distribution.
 	
- Baseband chain design and implementation. Programmable gain and bandwidth.